Nanometric Thin Films: Formation, Interfaces and Defects – ALD (Atomic Layer Deposition)

We have designed an ALD deposition system, it has the particularity to allow the use of isotopically labelled gases with a low consumption of precursors and to heat only the substrate where the chemical reactions inherent to the growth take place. This allows a more precise study of the growth mechanisms of the layers.

Caption: ALD house building.


Since June 2020, we have acquired a commercial machine to complete our equipment. This machine allows us to deposit at higher temperatures (up to 325°C, compared to 270°C) and to produce very homogeneous films on a substrate surface up to 4 inches in diameter.

Caption: ANRIC AT-410 commercial building.



Jean-Jacques Ganem: Jean-Jacques.Ganem(at)