Photodetection: ionic glass at play to control the carrier density fo nanocrystal array
Thanks to large progresses relative to their synthesis, nanocrystal now appaer as possible alternative to epitaxially grown semiconductors. However the doping of such nanoparticle remains chalenging and thus method to tune their carrier density still have to be develloped. The Chemical Physics and Dynamics of Surfaces team from INSP in partnership with IPCMS (U. Strasbourg) has develloped a new type of gate based on ionic glass to design field-effect transistor.Faitd’actu_sept_2020_En
Caption: Sketch of field effect transistor combining a LaF3 ionic glass as gate ; graphene as electrodes with HgTe nanocrystal array as channel.
Reference
“Reconfigurable 2D/0D p–n Graphene/HgTe Nanocrystal Heterostructure for Infrared Detection”
UN Noumbé, C Gréboval, C Livache, A Chu, H Majjad, LE Parra López, …
ACS nano 14, 4567-4576 (2020)
Article Emmanuel Lhuillier – el(at)insp.upmc.fr
