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General view of the molecular beam epitaxy platform - © INSP - Cécile Duflot
The MBE platform team offers its skills and expertise in the elaboration of thin films, heterostructures and epitaxial nanostructures in the framework of scientific projects.
- Growth and structural and electronic properties of thin films, heterostructures and nanostructures.
- Growth of state-of-the-art epitaxial samples in scientific projects (III-V semiconductors, Se-based lamellar, Fe-based compounds).
- MBE (molecular beam epitaxy) growth: III-V MBE, lamellar Se MBE, Fe MBE.
These elaboration tools are coupled to in situ study techniques (RHEED, STM) which allow to obtain samples of very good structural quality. The whole device is under ultra-high vacuum.
Open to private or public institutions / Quote on request.
Contact
- Paola Atkinson: paola.atkinson(at)insp.jussieu.fr – 01 44 27 98 09
