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Team
- Members : Jean-Louis Cantin, Ian Vickridge, Emrick Briand, Sébastien Steydli
- Emeritus researcher : Jurgen von Bardeleben
Solid State Quantum bits for quantum information technologies
We are studying magneto-optical properties of point defects in silicon carbide in order to use the electronic spin of these defects as quantum bit for quantum information processing. In 2015, we have identified in SiC a defect, named NV center and made of a Si vacancy with a N impurity as a first neighbour.
Caption : NV center in SiC. This defect is a Si vacancy with a neigboring N impurity located on a C lattice site.
This defect has an electronic spin S=1 as the well known NV center in diamond, studied for decades for the same application. But the diamond has limited applications due to its high growth cost and difficulties to get it p-type doped. On the contrary, the silicon carbide is a mature technological semiconductor well mastered by the electronic industry to produce power devices. Experiments of electron spin resonance with in situ photo excitation allow us to determine the magneto optcal signature of the NV center on each inequivalent lattice sites existing in the main three SiC polytypes : 6H, 4H and 3C-SiC.
Photo-EPR: in situ optical excitation © INSP
The magneto optical studies of this defect are in progress in order to measure the optically detected magnetic resonance (ODMR) associated with the different configurations of the NV center in SiC and to confirm the ability to optically manipulate is electronic spin. Theses studies are carried out at INSP in collaboration with S. Hameau and B. Eble of the Team ‘ Nanostructures : élaboration, effets quantiques et magnétisme’. These studies also benefit from a collaboration with W. Gao of the Nanyang Technological University (NTU Singapore) initiated in 2016 via a Hubert Curien project (PHC Merlion).
In the same time, severals collaborations with chemists of the Institut Parisien de Chimie Moléculaire at Sorbonne Universite allow to extend these studies to chemically or optically switchable molecular magnets. These studies have been funded in the past by three ANR projects. A new project ANR Magden aims to build and study magnetic dendrimers with suitable magnetic properties to form molecular quantum bits. This ‘bottom-up’ method is funded by the ANR – MAGDEN [2024-2028]: Dendrimères magnétiques. https://anr.fr/Projet-ANR-24-CE07-5072
Collaborations
- W. Gao – Nanyang Technological University (NTU Singapore)
- U. Gertsmann, Univ of Paderborn (Allemagne)
- V. Marvaud, G. Vives, S. Blanchard, Institut Parisien de Chimie Moléculaire (Sorbonne Université)
Publications
- H.J. von Bardeleben, J.L. Cantin, U. Gerstmann, W.G. Schmidt, T. Biktagirov, Spin Polarization, Electron-Phonon Coupling and Zero-Phonon Line of the NV Center in 3C-SiC
Nanoletters 21, 8119 (2021) - B. Doistau, L. Benda, JL. Cantin, O. Cador, F. Pointillart, W. Wernsdorfer, L.M. Chamoreau, V. Marvaud, B. Hasenknopf, G. Vives, Dual switchable molecular tweezers incorporating anisotropic Mn-salphen complexes
DALTON TRANSACTIONS 49 (26) p8872 (2020) - H. J. von Bardeleben, S. A. Zargaleh, J. L. Cantin, W. B. Gao, T. Biktagirov, and U. Gerstmann,Transition metal qubits in 4H-silicon carbide: A correlated EPR and DFT study of the spin S=1 vanadium V3+ center
Physical Review Materials 3, 124605 (2019) https://doi.org/10.1103/PhysRevMaterials.3.124605 - Kh. Khazen, H. J. von Bardeleben, S. A. Zargaleh, J. L. Cantin, Mu Zhao, Weibo Gao, T. Biktagirov, and U. Gerstmann. High-resolution resonant excitation of NV centers in 6H−SiC: A matrix for quantum technology applications.
Physical Review B 100, 205202 (2019) https://doi.org/10.1103/PhysRevB.100.205202 - S. Zargaleh, H. von Bardeleben, J. Cantin, U. Gerstmann, S. Hameau, et al.. Electron paramagnetic resonance tagged High Resolution Excitation Spectroscopy of NV-Centers in 4H-SiC.
Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2018, 98 (21), pp.214113. ⟨10.1103/PhysRevB.98.214113⟩. ⟨hal-02298324⟩ - S. Zargaleh, Sophie Hameau, Benoit Eble, F. Margaillan, Hans Jürgen von Bardeleben, et al.. Nitrogen vacancy center in cubic silicon carbide: A promising qubit in the 1.5μm spectral range for photonic quantum networks.
Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2018. ⟨hal-01902627⟩ - H. J. von Bardeleben, J. L. Cantin, A. Csóré, A. Gali, E. Rauls, et al.. NV centers in 3 C , 4 H , and 6 H silicon carbide: A variable platform for solid-state qubits and nanosensors.
Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2016, 94 (12), pp.121202(R) ⟨10.1103/PhysRevB.94.121202⟩. ⟨hal-01524178⟩ - S. Zargaleh, B. Eble, S. Hameau, J-L. Cantin, L. Legrand, et al.. Evidence for near-infrared photoluminescence of nitrogen vacancy centers in 4 H -SiC.
Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2016, 94 (6), pp.060102(R). ⟨10.1103/PhysRevB.94.060102⟩. ⟨hal-01524179⟩ - H. J. von Bardeleben, J. L. Cantin, E. Rauls, U. Gerstmann. Identification and magneto-optical properties of the NV center in 4 H − SiC.
Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2015, 92 (6), pp.064104. ⟨10.1103/PhysRevB.92.064104⟩. ⟨hal-01523482⟩
