Rodolphe Alchaar, Post-Doc dans l’équipe Physico-chimie et dynamique des surfaces de l’INSP.
INSP – Sorbonne Université – 4 place Jussieu – 75005 Paris – Barre 12-22, 4e étage, salle 426
Abstract
This work reports the development of InAs/GaSb type-2 superlattice (T2SL)-based barrier photodetectors operating in the long-wave (LWIR) and very long-wave infrared (VLWIR). The main properties of this material were described as well as the advantages it offers for LWIR detection. Photodetector devices were fabricated using a photolithography-based process and then characterized electrically and electro-optically, followed by a performance analysis.
